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SILICON GATE MOS 8308
- -
A.C. Characteristics
TA
=
oo.c
to'+70~C,
VCC
=
+5V
±5%;
VO_D
=
+12V
±5%,
VBB
=
-5V
_±5%,
VSS_=
OV,
Unless Otherwise
Specif.i~d.
Limits[2]
Symbol
Parameter
Unit
Min.
Typ.
Max.
tACC
Address
to
Output
Delay
Time
200-
450
ns
tC01
Chip Select 1
to
Output
Dela.y~ime
85
160
ns
teo
2
Chip Select 2
to
O~tput
Delay
Time
125
220
ns
Chip Deselect
to
Output
Data
float
Ti~_e_
125
220
.-
tOF
ns
NOTE 2: Refer
to
conditions~
of
Test for
A.C.
Characteristics.
~dd
50
nanoseconds (worst case)
to
specified values
at
VOH
=
3.7V
@
IOH
=-1mA,
CL
=
100pF.
CONDITIONS OF TEST FOR
A.C. CHARACTERISTICS
CAP~CI_!ANCE
TA_=
__
~5°C,
f=
1MHz!
VBB
=-5V,
VOO,.
Vcc
and
all
ot~er
pins
ti~~
~o
Vss.
Output
Load 1
TTL
Gate, and
CLOAO
= 100pF
Input
Pulse
Levels . . . . . . . . . . . . . . .
..
.65V
to
3.3V
Input
Pulse
Rise
and
Fall Times 20
nsec
Timing Measurement Reference Level
........
·
....
·
..
·
..
2.4V
VIH, VOH;
0.8V
VIL, VOL
Limits
Symbol
Test
Typ.
Max.
CIN
Input
Capacitance
6pF
CoUT
Output
C~pacitance
12pF
4--------
t
ACC
--------~I
----------~
ADDRESS
.Ao-Ag
--------------------- --------------
1..----t
Co1
----·1
~----------------
1....-------te02------
...
1
---------------,
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