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SILICON GATE MOS 8102-2
ABSOLUTE MAXIMUM RATINGS·
Ambient Temperature Under
Bias
Storage Temperature
Voltage
On
Any
Pin
With
Respect
To Ground
Power Dissipation
-O.5V
to
+7V
. 1 Watt
*COMMENT:
Stresses
above those listed under "Absolute Maxi-
mum Rating" may
cause
permanent
damage
to
the
device. This
is
a
stress
rating
only
and
functional
operation
of
the device at these
or
at any
oth~r
condition above those indicated in the operational
sections
of
this specification
is
not
implied. Expo-
sure
to
absolute maximum rating conditions
for
extended periods may affect device reliability.
D.C. AND OPERATING CHARACTERISTICS
T
A
=
OOC
to
+70°C, Vee = 5V ±5%
unless
otherwise specified
LIMITS
SYMBOL PARAMETER
~--
--
UNIT
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
--
,
III
INPUT LOAD CURRENT
10
p.A
VIN = 0
to
5.25V
(ALL
INPUT PINS)
I
LOH
OUTPUT LEAKAGE CURRENT
10
IJA
CE
= 2.2V, V
OUT
= 4.0V
I
lOL
OUTPUT LEAKAGE CURRENT
-100
IJA
CE
= 2.2V, V
OUT
= O.45V
'
CC1
POWER
SUPPLY CURRENT
30
60
I
mA
ALL
INPUTS = 5.25V
,
DATA
OUT
OPEN
i
I
i
T
A
=25°C
I
CC2
POWER
SUPPLY
CURREN:=]
70
I
mA
ALL
INPUTS = 5.25V
DATA
OUT
OPEN
I
T
A
=
OOC
i
V
il
INPUT "LOW" VOLTAGE
-0.5
+0.65
I
V
V
1H
INPUT
"HIGH"
VOLTAGE 2.2
Vee
i
V
VOL
OUTPUT
"LOW"
VOL
-rAGE
+0.45
!
V
'Ol
=
1.9mA
I
V
OH
OUTPUT
"HIGH"
VOLTAGE
2.2
I
!
I
V
'OH=
-100IJA
I
(1)
Typical
values are
for
TA=
25°C
and
nominal
supply
voltage.
TYPICAL D.C. CHARACTERISTICS
POWER
SUPPL
V CURRENT
VS.
AMBIENT TEMPERATURE
POWER
SUPPLY CURRENT VS.
SUPPLY VOLTAGE
6
54
10
50 4 - -
+-
- .
·l
- -
,-+----+---1
AMBI~NT
TEMPERAl
URE
~
25°C \
40
- -
~
+_.-
-
-+--
--.~!
-_+____f
~
I I I
E
t?
30
<t
a:
w
> 20 - _
..
t
<t
u
u
___
o~.
--.-i
I I
I I . V =
525V
--+--T~'--
cc -
~4~!
I I :
-'~--i---±
_I
I._
n
,
Y:
I
,..-
..
_
SPEC.
iii
'-"--
POINTS 1 -
30
10
~
__
--t.-
--..I-
__
-----"
o 10 20 30 40 50
60
70
20
---+.-.,
-+-
..
----+-
80
70
~
60
!
w
50
0
<{
a:
w
>
40
<{
u
_u
AMBIENT
TEMPERATURE
(OCI
Vcr;
(VOLTS)
5-76