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SILICON GATE MOS 8111-2
Absolute Maximum Ratings*
Ambient
Temperature Under
Bias.
. . .
..
O°C
to
70°C
Storage Temperature
-65°C
to
+150°C
Voltage On
Any
Pin
With
Respect
to
Ground . . . . . . .
..
-0.5V
to
+7V
Power Dissipation 1 Watt
*COMMENT:
Stresses
above those listed under ''Absolute Maximum
Rating"
may
cause
permanent damage
to
the device. This
is a
stress
rating
only
and
functional operation
of
the de-
vice
at
these
or
at
any
other
condition above those indi-
cated in the operational sections
of
this specification is
not
implied. Exposure to absolute maximum rating con-
ditions
for
extendedperiods may
affect
device reliability.
D.C.
and Operating Characteristics
TA =
O°C
to
70°C,
VCC
=
5V
±5% , unless otherwise specified.
Symbol
Parameter Min.
Typ.r
1
]
Max. Unit
Test Conditions
III
Input
Load Current 10
J.1A
VIN =0
to
5.25V
IlO
H
I/O
Leakage Current
15
J.1A
CE
=
2.2V,
VI/O =
4.0V
IlOl
I/O
Leakage Current
-50
J1A
CE
=
2.2V,
VI/a =
0.45V
ICC1
Power Supply Current
30
60
mA
VIN
=
5.25V
11/0
=OmA, TA =25°C
ICC2
Power Supply Current
70
mA
VIN
=
5.25V
11/0
=OmA, TA =
O°C
VIL
Input
Low
Voltage
-0.5
+0.65
V
VIH
Input
High Voltage 2.2
Vcc
V
Val
Output
Low
Voltage
0.45
V
10l
=
2.0mA
VOH
Output
High Voltage 2.2
V
10H
=
-150
J.1A
NOTES:
1.
Typical
values are
for
TA = 25°C and
nominal
supply voltage.
OUTPUT SOURCE CURRENT
VS.
OUTPUT VOLTAGE
OUTPUT SINK CURRENT VS.
OUTPUT VOLTAGE
1.5
1.0
VOL
(VOLTS)
0.5
15
..--+---+--+-~~--+-------t
..J
o
i
10
~--4---+--'~-~-+--+------4
!
V
OH
(VOLTS)
o
L----L-_..L-.-..L.---.;;;~__.._.
__
.-.
1
-5
.-.----+--~-
AMBIENT TEMPERATURE
-15
~~-==--~
O°C
-t----+---I----+--;
25°C
70°C
i
-10
~----4-..-+---+--t----t--+----1
!
~
.2
5-72