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SILICON GATE MOS 8101-2
Absolute Maximum Ratings*
Ambient Temperature Under
Bias.
. . .
..
O°C
to
70° C
Storage Temperatu
re
..
. . . . . . . . .
-65
0
C
to
+150
0
C
Voltage
On
Any
Pin
With
Respect
to
Ground.
. . . . . .
..
-0.5V
to
+7V
Power Dissipation . . . . . . . . . . .
..
1 Watt
*COMMENT:
Stresses
above those listed under ''Absolute
Maximum
Rating"
may
cause
permanent damage
to
the device. This
is a stress rating
only
and
functional
operation
of
the
de-
vice
at
these
or
at
any
other
condition
above those indi-
cated in the operational sections
of
this specification
is
not
implied. Exposure
to
absolute
maximum
rating con-
ditions
for
extended periodsmay
affect
device reliability.
D.C.
and Operating
Charact~ristics
TA
=
o°c
to
70°C, Vee =
5V
±5%
unless otherwise specified.
V,N
=0
to
5.25V
V,N =
5.25V,
10
= OmA
TA
= 25°C
CE
=
2.2V,
VOUT
=
0.45V
CE
=
2.2V,
VO
UT
=
4.0V
Test Conditions
Symbol
Parameter
Min.
Typ.[1]
Max.
Unit
ILl
I
nput
Current
10
pA
I
LOH
110
Leakage Current[2]
15
pA
-
ILO
L
1/0 Leakage Current[2]
-50
J1A
lecl
Power Supply Current
30
60
rnA
~I~~;--l-p~~-;s~;~~c~;~;~~
70
mA
VIN =
5.25V.
10 =
OmA
--1-
T
A
=
O°C
~~:~;-_:
~_!~~~-~~~-==--------~
VOL
I
Output
"Low"
Voltage +0.45
VIOL
=
2.0mA
~E~~:=~utP~-t-·7~igh-~;\/oltage-~------
- ----
--i2-+---=~==
__
~=
-
V____
10H =
-150
p.A
NOTE:
1.
Typical
values are
for
T A =
25()
e and
nominal
supply
voltage.
2.
Input
and
Output
tied
together.
OUTPUT SOURCE CURRENT VS.
OUTPUT
VOLTAGE
OUTPUT SINK CURRENT VS.
OUTPUT VOLTAGE
: AMBIENT TEMPERATURE I
~.
~O"l:
l-
---l-----.-i-.-t-.-.--
:
-f
25
C I I
t'
I
~l~t-+--
---T~--
! !
I!
I
~
-10
..
_.-
I
.-+----+----.
I !
~
, : I
_0
--,-
-
r.'
I
-_.V
u
4.75V
OUTPUT
"HI(iH"
TYPICAL
t.---"-'-~---+------""!I--t---
+---;
-
I
o
L-.-----'-_.....L.-----lo....-~_"O"-
_
1
V
OH
IVOL
lS)
VOL
(VOLTS)
5-68