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SILICON GATE MOS 8308
Absolute Maximum Ratings*
Ambient
Temperature Under Bias
-25°C
to
+85°C
Storage Temperature -65°·C to-i-150°C
Voltage On
Any
Pin
With
Respect
To
V
aa
. . . . . . . . . . . . . . . . .
-0
..
3V
to
20V
Power Dissipation 1.0 Watt
*COMMENT
Stresses above those listed
under"
Absolute Maximum Ratings" may
cause
permanent
damage
to
the
device. This
is
a stress rating only
and functional operation of
the
device
at
these
or
any
other
condi-
tions above those indicated
in'
the
operational sections
of
this speci-
fication
is
not
implied. Exposure
to
absolute
maximum rating condi-
tions for
extended
periods may
affect
device reliability.
D.C. and Operating Characteristics
TA
=
O°C
to
+70°C,
VCC
=
5V
±5%;
Vo
o
=
12V
±5%, Vas =
-5V
±5%, V
ss
=
OV
Unless Otherwise Specified.
Limits
Symbol
Parameter
TypJ1]
Unit
Test Conditions
Min.
Max.
ILl
Input
Load Current 10
J.l.A
VIN
=0
to
5.25V
-
(All
I
nput
Pins Except CS, )
ILCL
Input
Load Current on CS,
1.6
rnA
VIN
=
0.45V
ILPC
Input
Peak
Load Current on CS,
4
rnA
VIN
=
0.8V
to
3.3V
ILKC
Input
Leakage Current on CS,
10
J.l.A
VIN
=
3.3V
to
5.25V
ILO
Output
Leakage Current
10
J.l.A
Chip Deselected
VIL
Input
"Low"
Voltage
Vss-1
0.8V
V
VIH
Input
"H
igh"
Voltage
3.3
Vcc+1.0
V
VOL
Output
"Low"
Voltage
0.45 V
IOL
=
2rnA
VOH'
Output
"High"
Voltage
2.4 V
IOH
=
-4rnA
VOH2
Output
"High"
Voltage
3.7
V
IOH
=
-1rnA
Icc
Power
~upplV
Current
Vcc
.8
2
rnA
100
Power Supply Current
Voo
32
60 rnA
Iss
Power Supply Current
Vss
10~A
1
rnA
Po
Power Dissipation
775
rnW
NOTE
1:
Typical values
for
TA
= 25°C
and
nominal supply voltage
D.C. OUTPUT
CHARACTERISTICS
D.C.
OUTPUT
CHARACTERISTICS
2.4 2.6 2.8 3.0 3.2 3.4 3.6
3.8
4 0
.2
V
OH
VOLTS
'lil
~,
I
II
t = Oto70°C
,
A I I
1',
'I',
I
I
TYPICAL
"
",
'lIlI
/~
~
SPEf
~
~Ill..
-........
~
,....."
((
4
-1
-3
-2
-8
-9
-10
-7
1-6
~-5
-4
~A
:::
6to
76°C
,
~
/
~
~I
,
TYPICAL J
'('
~
/
~
~
/
~J
~
V
~
~
V
~
.........
'"
I
~
SPEC
~
V
I
o
o
.1
.2 .3 .4
.5
.6 .7 .8 .9 1.0
VOL
VOLTS
2
8
3
7
9
6
1 5
.1J
4
5-56