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SILICON GATE MOS 8102A-4
ABSOLUTE MAXIMUM RATINGS·
Ambient Temperature Under
Bias
Storage Temperature
Voltage
On
Any Pin
With
Respect
To Ground
Power Dissipation
-O.5V
to
+7V
1 Watt
*COMMENT:
Stresses
above those listed under "Absolute Maxi-
mum Rating" may
cause
permanent
damage
to
the
device. This
is
a
stress
rating
only
and
functional
operation
of
the device at
these
or at any other
condition above those indicated in the operational
sections
of
this specification
is
not implied. Expo-
sure
to
absolute maximum rating conditions
for
extended periods may affect device reliability.
D.C. AND OPERATING CHARACTERISTICS
T
A
=
O°C
to
+70
o
e,
V
cc
=5V ±5%
unless
otherwise specified
LIMITS
SYMBOL
PARAMETER
TYP.c
1
)
UNIT
TEST CONDITIONS
MIN.
MAX.
ILl
INPUT
LOAD
CURRENT
10
J,J.A
VIN = 0
to
5.25V
(ALL
INPUT PINS)
I
LOH
OUTPUT
LEAKAGE
CURRENT
5
J,J.A
CE
= 2.0V, v
OUT
= 2.4 to
I
LOL
OUTPUT
LEAKAGE
CURRENT
-10
J,J.A
CE
= 2.0V, v
OUT
= 0.4V
I
CC1
POWER
SUPPLY CURRENT
30
60
rnA
ALL
INPUTS = 5.25V
DATA
OUT
OPEN
T
A
=
25°C
I
CC2
POWER
SUPPLY CURRENT
70
rnA
ALL
INPUTS = 5.25V
OAT
A
OUT
OPEN
T
A
=
DoC
V
IL
INPUT
"LOW"
VOLTAGE
-0.5
0.8
V
V
IH
INPUT
"HIGH"
VOLTAGE
2.0
Vcc
V
VOL
OUTPUT
"LOW"
VOLTAGE
0.4
V
IOl
=
2.1mA
V
OH
OUTPUT
"HIGH"
VOLTAGE
2.4
V
IOH= -100J,J.A
(1)
.
Typical
values are
for
T
A=
250C and nominal
supply
voltage.
TYPICAL D.C. CHARACTERISTICS
POWER SUPPLY CURRENT VS.
AMBIENT
TEMPERATURE
80
__
-......,.....-~---r---r--.,.----,
70-----+---+----+---~
60
«
..s
w
50
e"
«
a:
w
40
>
«
u
_u
30
20
60
50
40
«
..s
w
30
e"
«
a:
w
20
>
«
u
~
10
0
POWER
SUPPLY
CURRENT
VS.
SUPPLY
VOLTAGE
I
I
I I
AMBIENT TEMPERATURE = 25°C
I
'
............
""
o(-.(v~
~
V
/
10
'--
__
~____"_"""'O-'_..Ioo._--I..
__
o 10 20 30 40 50 60 70
AMBIENT TEMPERATURE
(OC)
5-80
3 4 5
Vee
(VOLTS)
6