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SILICON GATE MOS
8302
Absolute
Maximum
Ratings
~~
Ambient
Temperature Under Bias
oOc
to
+70
o
C
Storage Temperature
-65°C
to
+125
0
C
Soldering Temperature
of
Leads (10
sec)
. . . . . .
..
+300
o
C
Power Dissipation 2 Watts
Input
Voltages and Supply
Voltages
with
respect
to
V
cc
+O.5V
to
-20V
*COMMENT
Stresses
above those listed under
II
Absolute Maximum Rat-
ings" may
cause
permanent
damage
to
the device. This
is
a
stress
rating
only
and
functional operation
of
the device at
these
or at any other condition above those indicated in
the operational sections
of
this specification
is
not
implied.
Exposure
to
Absolute Maximum Rating conditions
for
ex-
tended periods may affect device reliability.
READ
OPERATION
D.C.
and Operating Characteristics
T
A
=
DOC
to
70°C,
Vee
=
+5V±5%,
V
oo
=
-9V±5%,
V6~
=
-9V±5%,
unless otherwise noted.
SYMBOL
TEST
MIN.
TypJ2)
MAX.
UNIT
CONDITIONS
'll
Address and Chip Select
1
JJA
V
,N
=
O.OV
Input
Load Current
'
lO
Output
Leakage Current
1
J,JA
V
OUT
=
O.OV,
CS
= V
cc
-2
'
000
Power Supply Current
5
10
mA
VGG=Vec,CS=Vcc-2
10l
= O.OmA, TA =
25°C
1001
Power Supply Current
35
50
mA
CS=V
ee
-2
"""l
'Ol
=O.OmA, T
A
= 25°C
'
002
Power Supply Current
32
46
mA
CS=O.O
'Ol
=O.OmA, TA = 25°C
> Continuous
'
003
Power Supply Current
38.5
60
mA
CS=V
ec
-2
'Ol
=O.OmA
, TA =
OOC
Operation
'
CF1
Output Clamp Current
8
14
mA
V
OUT
=
-1.0V,T
A
=ooC
'
CF2
Output
Clamp Current 13
mA
V
OUT
=
-1.0V,
T
A
=
25°C
4
'
GG
Gate Supply Current
1
JJA
V
1L1
Input
Low
Voltage
for
-1.0
0.65
V
TT
L Interface
V
1L
2
Input
Low
Voltage
for
Voo
Vce
-6
V
MOS
Interface
V
,H
Address and Chip Select
V
ee
-2
Vee
+0.3
V
Input High Voltage
'Ol
Output
Sink Current 1.6
4
mA
V
OUT
= 0.45V
'OH
Output
Source Current
-2.0
mA
V
OUT
=
O.OV
VOL
Output
Low
Voltage
-.7
0.45 V
'Ol
= 1.6mA
V
OH
Output
High Voltage 3.5
4.5
V
'OH
=
-100
fJA
Note 1. VGG
may
be
clocked
to
reduce
power
dissipation.
In
this
mode
average
100
increases
in
proportion
to
VGG
duty
cycle.
Note
2.
Typical
values are
at
nominal
voltages
and
TA = 25°C.
5-52