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SILICON GATE MOS
81078·4
Absolute Maximum Ratings*
Temperature Under
Bias
ooc
to
70°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
..
-65°C
to
+150
0
C
All I
nput
or
Output
Voltages
with
Respect
to
the most Negative Supply Voltage,
Vee
. . . . . . . . . . . . . . . .
..
+25V to
-O.3V
Supply Voltages
Vee,
Vcc, and Vss
with
Respect
to
Vee.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
..
+20V to
-O.3V
Power Dissipation 1.25W
*COMMENT:
Stresses
above those listed under ''Absolute
Maximum
Ratings"may
cause
permanentdamage to the device. This
is
a stress rating
only
and
functional
operation
of
the device
at
these
or
any
other
conditions above those indicated in the operational sections
of
this specificationis
not
implied. Exposure toabsolute maximum ratingconditions
for
extendedperiods
may
affect
device reliability.
D.C.
and Operating Characteristics
TA = 0°C
to
70°
C,
Voo
=+12V ±
5%,
V
cc
=+5V ±
5%,
V
ss
[1]
=
-5V
±
5%,
Vss
=
OV,
unless otherwise noted.
Limits
Symbol
Parameter
Typ.[2]
Unit
Conditions
Min.
Max.
III
Input
Load Current
.01
10
JJA
VIN
=VIL
MIN
to
V,H
MAX
(all inputs except
CE)
Ilc
Input
Load Current
.01
10
JJA
V,N
=V,L
MIN
to
V,H
MAX
Illol
Output
Leakage
Current
.01
10
JJA
CE
=
VILC
or
CS
=
V,H
for
high impedance state
Vo
=
OV
to
5.25V
1
001
Voo
Supply Current
110
200
JJA
CE
=
-1V
to
+.6V
during
CE
off[3]
'002
Voo
Supply Current
80
100
mA
CE
=
V,HC,
TA =25°C
during
CE
on
100
AV1
Average
Vo
o
Current 55 80
mA
Cycletime=470ns, }
tCE
=300ns
TA
= 250C
IOOAV2
Average
Voo
Current
27
40
rnA
Cycle time
=1000ns,
tCE
=300ns
ICC1
[4]
Vec Supply Current
-
during
CE
off
.01
10
JJA
CE
=
V'LC
or
CS
=
V,H
Iss
VeB Supply
Cu
rrent 5
100
JJA
Vil
Input
Low
Voltage
-1.0
0.6
V
tT=
20ns -
See
Figure 4
VIH
Input
High Voltage 2.4
VCC+l
V
VllC
CE
Input
Low
Voltage
-1.0
+1.0
V
VIHC
CE
Input
High Voltage
Voo-l
Voo+1
V
Val
Output
Low
Voltage
0.0
0.45
V
IOl
=2.0mA
VO
H
Output
High Voltage
2.4
Vec
V
'OH
=
-2.0mA
NOTES:
1.
The
only
requirement
for
the
sequence 'of
applying
voltage
to
the device
is
that
VOO,
VCC,
and
VSS
should never be .3V
more
negative
than
VSS.
2.
Typical
values are
for
TA
= 25°C and nominal
power
supply voltages.
3. The I
DO
and
ICC
currents
flow
to
VSS'
The I
Be
current
is
the sum
of
all leakage currents.
4.
During
CE
on
VCC
supply
current
is
dependent
on
output
loading,
VCC
is
connected
to
output
buffer
only.
5-84