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SILICON GATE MOS 8251
D.C. Characteristics:
Symbol Parameter Min.
Typ.
Max. Unit Test Conditions
V,L
Input
Low Voltage
Vss-·5
0.8
V
VIH
Input
High Voltage
2.0
Vee
V
VOL
Output
Low
Voltage
0.45
V
IOl
=
1.6mA
VOH
Output
High Voltage
2.2 V
IOH
=-1001lA (
DB
o-7)
IOH
=-1001lA (Others)
IOL
Data
Bus
Leakage
50
IJ.A
VOUT
=
4.5V
ILl
Input Load Current
10
IlA
@5.5V
Icc
Power Supply Current
45
80
Capacitance
TA
= 25°C; Vee =
vss
=
OV
Symbol
Parameter
Min.
Typ.
Max. Unit
Test
Conditions
CtN
Input Capacitance
10
pF
fc
= 1MHz
CliO
I/O
Capacitance
20
pF
Unmeasured pins returned
to
Vss.
5-144