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SILICON GATE MOS 8102A-4
Typical
D.
C. and A.
C.
Characteristics
POWER
SUPPLY CURRENT
VS.
AMBIENT
TEMPERATURE
POWER
SUPPLY CURRENT
VS.
SUPPLY VOLTAGE
15
o 10 20 30
40
50 60 70
T
A
(OC)
Vee
(VOLTS)
I
f--
T
A
"'25°C-
V
./
/
~PICAL
/r
/
I
35
5
1
10
15
25
30
ct
! 20
I
I
VeeMAX.-
............
-..............
~
TYPICAL
r---
___
........
-
20
40
45
35
i
~
30
25
OUTPUT SOURCE CURRENT VS.
OUTPUT
VOLTAGE
OUTPUT
SINK
CURRENT VS.
OUTPUT
VOLTAGE
-30
-25
-20
ct
!
-15
%
~
-10
-5
"
\
..
\
TYPICAL
~
T
A
;:
25°C
Vee
MIN.
'~
'""'"
30
25
20
15
10
~
,......,.....1-
V
TYPICAL
/
j'
/
T
A
=
25'C
J
Vee
MIN.
I
V
OH
(VOLTS)
VOL
(VOLTS)
1.6...----+--_+_-
""
.l
T
A
..
700C
CYCLE
TIME
=350ns
~
0.95
1.00
ACCESS
TIME
VS. Vee
NORMALIZED
TO Vee =
5.0V
1.05
1.2
...----+--_+_-+---+----+--t----t
VIN
LIMITS
VS. TEMPERATURE
1.8
~
....
~
1.4...----+--_+_-+--+----+--t----t
Z
>-
Vee"
5.0V
1.0
0
10 20
30
40
50
60 70
T
A
(OC)
4.0 4.5 5.0
Vee
(VOLTS)
5.5 6.0
ACCESS
TIME
VS.
AMBIENT
TEMPERATURE
ACCESS
TIME
VS.
LOAD·CAPACITANCE
Vee
MIN.
1 TTL
LOAD
c;.
"100pF
350
,...----,----,----r---r----'T"""'-.....,
T
A
" 25°C
Vee
MIN.
1 TTL
LOAD
250
t-----+--TY
.......
P-ICA-L-+----+----I:=........,~--1
250
t-----t------i
-=T---+---+--~
TYPICAL
c
..
-:.
150
t-----+--+----+--+-----+--t----t
150
t------I----t--+---t----t---i
OUTPUT REFERENCE LEVELS: V
OH
'"
2.0V
VOL
aO.8V
5OL.-----J...._..L-----L._.....L----L_
.........
---'
o 10 20
30
40
50
60 70
T
A
(OC)
OUTPUT REFERENCE
LEVEL"
,
.5V
5O~---I._---I._---.l.---'-----""'"
o 100 200 300 400 500
600
C
L
(pF)
5-82