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SILICON GATE MOS
81078·4
A.
C.
Characteristics T
A
=
oOc
to
70
0
C,
V
oo
=
12V
±
5%,
V
CC
=
5V
±10%, Va
a
=
-5V
±
5%,
READ, WRITE,
AND
READ
MODIFY
/WRITE CYCLE
vss
=
OV,
unless
otherwise
noted.
Symbol
Parameter
Min. Max.
Unit
Conditions
tREF
Time
Between
Refresh
2
ms
tAC
Address
to
CE
Set
Up
Time
0
ns
tAC
is
measured
from
end
of
address
transition
tAH
Address
Hold
Time
100
ns
tcc
CE
Off
Time
130
ns
tT
CE
Transition
Time
10
40
ns
tCF
CE
Off
to
Output
0
ns
High
Impedance-State
READ CYCLE
Symbol
Parameter
Min.
Max. Unit
Conditions
tCY
Cycle
Time
470
ns
tT
=
20ns
tCE
CE
On
Time
300
4000
ns
tco
CE
Output
Delay
250
ns
C
10ad
=
50pF,
Load
=
One
TTL
Gate,
tACC
Address
to
Output
Access
270
ns
Ref
= 2.0V.
tWL
CE
to
WE
0 ns
tACC
=tAC +
tco
+ 1tT
twc
WE
to
CE
on
0 ns
WRITE CYCLE
Symbol
Parameter
Min.
Max.
Unit
Conditions
tCY
Cycle
Time
470
ns
tT
=
20ns
tCE
CE
On
Time
300
4000
ns
tw
WE
to
CE
Off
150
ns
tcw
CE
to
WE
150
ns
tow
[2]
DIN
to
WE
Set
Up
0
ns
tOH
DIN
Hold
Time
0
ns,
twP
WE
Pulse
Width
50
ns
Read
Modify
Write Cycle
Symbol
Parameter
Min.
Max.
Unit
Conditions
t
RwC
Read
Modify
Write(
RMW)
590
ns
tT
=
20ns
Cycle
Time
t
CRW
CE
Width
During
RMW
420
4000
ns
!wc
WE
to
CE
on
0
ns
t
w
WE
to
CE
off
150
ns
C
10ad
=
50pF,
Load
=
One
TTL
Gate,
twp
WE Pulse Width
50
ns
Ref
=
2.0V
tow
DIN
to
WE
Set
Up
0
ns
t
OH
DIN
Hold
Time
0
ns
tco
CE
to
Output
Delay
250
ns
tACC
Access
Time
270
ns
tACC
= tAC +
tco
+
ltT
5-86