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SILICON GATE
MOS
8102·2
TYPICAL D.C. CHARACTERISTICS
INPUT CURRENT VS.
INPUT VOLTAGE
-7.5
-1
OUTPUT SINK CURRENT VS.
bUTPUT
VOLTAGE
1.5
1.0
VOL
(VOLTS)
0.5
VIN
(VOLTS)
EFFECTIVE INPUT
CHARACTERISTIC
I
Vee g 5.0V
~~~b~.J
VIL
MAX.
( VIH
MIN.
V
IN
(VOLTS)
+1
+2 +3 +4
+5
+6
Vee~
5.0V
r
TYPICAL
+5
-5
+2.5
OUTPUT SOURCE CURRENT
VS.
OUTPUT VOLTAGE
OUTPUT CURRENT VS. OUTPUT
VOLTAGE WITH CHIP DISABLED
RELATIONSHIPBETWEEN OUTPUT
SINK CURRENT, NUMBER OF OR-TIES,
AND
OUTPUT VOLTAGE
20
12
16
vcclg
4.75~
/
V
[7
7
/
1.5
.40 .45 .50 .55 .60 .65 .70 .75
VOL (VOLTS)
4.3
3.9
3.5
ct
3.1
.g
~
.2
2.7
2.3
1.9
V
OUT
(VOLTSt
+1
+2 +3 +4 +5 +6
TYPICAL
CE
g 2.2V
r"T-
+5
-20
-1
-15
ct
-5
.g
~
-
-10
V
OH
(VOLTS)
AMBIENT TEMPERATURE
oac
-+--+-~_---+-_-I
25°C
70°C
0
----'_---10._--1-----:::......1.-_...10.0-_...1.----'
1
-15
ct
-10
t-----.~__+---+--+---+--_+_---I
!
X
.!'
TYPICAL A.C. CHARACTERISTICS
ACCESS
TIME
YS.
LOAD
CAPACITANCE
ACCESS
TIME
YS.
AMBIENT
TEMPERATURE
1400
1200
1000
!
800
c
~
600
400
I T
T
A
II
25°C
Vee
II
4.75V _
1TTL LOAD
SPEC.
POINT
4
--
----
~
---
---
~~l.
1400
1200
1000
~
800
<[
~
600
400
I
I
Vee
II
4.75V
1TTL
LOAD_
C
l
"
lOOpF
SPEC.
POINT
•
l.....--
."",..,-
.-..
.......
~-
----
l-tP\CAl.
200
200
00
50 100 150 200 250 300 350
00
10 20 30
40
50
60
70
LOAD
CAPACITANCE
(pFI
AMBIENT
TEMPERATURE
(OCI
5-78