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Epson Research and Development
Page 41
Vancouver Design Center
Hardware Functional Specification S1D13505
Issue Date: 01/02/02 X23A-A-001-14
Table 6-5: Electrical Characteristics for VDD = 3.0V typical
Symbol Parameter Condition Min Typ Max Units
I
DDS
Quiescent Current Quiescent Conditions 260 uA
I
IZ
Input Leakage Current -1 1
µ
A
I
OZ
Output Leakage Current -1 1
µ
A
V
OH
High Level Output Voltage
VDD = min
I
OL
= -1.8mA (Type1),
-3.5mA (Type2)
-5mA (Type3)
V
DD
- 0.3 V
V
OL
Low Level Output Voltage
VDD = min
I
OL
= 1.8mA (Type1),
3.5mA (Type2)
5mA (Type3)
0.3 V
V
IH
High Level Input Voltage CMOS level, V
DD
= max 2.0 V
V
IL
Low Level Input Voltage CMOS level, V
DD
= min 0.8 V
V
T+
High Level Input Voltage
CMOS Schmitt,
V
DD
= 3.0V
2.3 V
V
T-
Low Level Input Voltage
CMOS Schmitt,
V
DD
= 3.0V
0.5 V
V
H1
Hysteresis Voltage
CMOS Schmitt,
V
DD
= 3.0V
0.1 V
R
PD
Pull Down Resistance V
I
= V
DD
100 200 400 k
Ω
C
I
Input Pin Capacitance 12 pF
C
O
Output Pin Capacitance 12 pF
C
IO
Bi-Directional Pin Capacitance 12 pF