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Epson Research and Development
Vancouver Design Center
S1D13505 Hardware Functional Specification
X23A-A-001-14 Issue Date: 01/02/02
Figure 7-15: EDO-DRAM Read-Write Timing
Table 7-15: EDO-DRAM Read/Write/Read-Write Timing
Symbol Parameter Min Max Units
t1 Internal memory clock period 25 ns
t2
Random read cycle REG[22h] bit 6-5 == 00 5t1 ns
Random read cycle REG[22h] bit 6-5 == 01 4t1 ns
Random read cycle REG[22h] bit 6-5 == 10 3t1 ns
t3
RAS# precharge time (REG[22h] bits 3-2 = 00) 2t1 - 3 ns
RAS# precharge time (REG[22h] bits 3-2 = 01) 1.45 t1 - 3 ns
RAS# precharge time (REG[22h] bits 3-2 = 10) 1t1 - 3 ns
t4
RAS# to CAS# delay time (REG[22h] bit 4 = 0 and
bits 3-2 = 00 or 10)
2t1 - 3 ns
RAS# to CAS# delay time (REG[22h] bit 4 = 1 and
bits 3-2 = 00 or 10)
1t1 - 3 ns
RAS# to CAS# delay time (REG[22h] bits 3-2 = 01) 1.45 t1 - 3 ns
t5 CAS# precharge time 0.45 t1 - 3 ns
t6 CAS# pulse width 0.45 t1 - 3 ns
t7 RAS# hold time 1 t1 - 3 ns
t8
Row address setup time (REG[22h] bits 3-2 = 00) 2.45 t1 ns
Row address setup time (REG[22h] bits 3-2 = 01) 2 t1 ns
Row address setup time (REG[22h] bits 3-2 = 10) 1.45 t1 ns
t9
Row address hold time (REG[22h] bits 3-2 = 00 or
10)
0.45 t1 - 3 ns
Row address hold time (REG[22h] bits 3-2 = 01) 1 t1 - 3 ns
t10 Column address setup time 0.45 t1 - 3 ns
t11 Column address hold time 0.45 t1 - 3 ns
RAS#
CAS#
MA
MD(Read)
R
C1
Memory
Clock
d1
C2 C3
d2 d3
t3 t4
t5 t6
t1
t7
t8
t9
t10 t11
t14
t15
t23 t24
WE#
t12
t19
t1
MD(Write)
t20 t21
d1 d2 d3
t22
C2 C3
C1
t25 t26