MEMORY CONTROLLER
Asynchronous page mode read
214 Hardware Reference NS9215
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Asynchronous page mode read
The memory controller supports asynchronous page mode read of up to four
memory transfers by updating address bits addr[1] and addr[0]. This feature
increases the bandwidth by using a reduced access time for the read accesses that
are in page mode. The first read access takes static wait read and
WA IT RD cycles.
Subsequent read accesses that are in page mode take static wait page and
WA IT PAG E
cycles. The chip select and output enable lines are held during the burst, and only
the lower two address bits change between subsequent accesses. At the end of the
burst, the chip select and output enable lines are deasserted together.
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Asynchronous page mode read: Timing and parameters
This section shows asynchronous page mode read timing diagrams and parameters.
External memory
page mode read
transfer
ThIs diagram shows an external memory page mode read transfer with two initial
wait states and one sequential wait state. The first read requires five AHB
arbitration cycles (plus three wait states); the following (up to 3) sequential
transfers have only one AHB wait state. This gives increased performance over the
equivalent nonpage mode ROM timing.
Timing parameter Value
WAITRD 2
WAITOEN 0
WAITPAGE N/A
WAITWR N/A
WAITWEN N/A
WAITTURN N/A
A+8A A+4
D(A)
D(A+4)
clk_out
addr
data
cs[n]
st_oe_n